n-channel jfet monolithic dual u443 / u444 features high gain . . . . . . . . . . . . . . . . . . . . . . . g fs > 6 ms typical low leakage . . . . . . . . . . . . . . . . . . . . . . i g < 1pa typical low noise applications differential wideband amplifiers vhf/uhf amplifiers test and measurement multi-chip/hybrids description the u443 series is an n-channel monolithic dual jfet designed for high speed amplifier circuits. featuring high gain ( > 6 ms typical), low leakage (< 1pa typical) and low noise this device is an excellent choice for high performance test and measurement, wideband amplifiers and vhf/uhf circuits. ordering information part package temperature range u443-4 hermetic m0-002ag (to-78) -55 o c to +150 o c xu443-4 sorted chips in carriers -55 o c to +150 o c pin configuration llc s2 g1 d2 d1 g2 s1 c to-78 1 2 3 4 5 bottom view 1 2 3 4 5 6 7 7 6 source 1 drain 1 gate 1 case/body source 2 drain 2 gate 2 cj1
u443 / u444 llc absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter/test condition symbol limit unit gate-drain voltage v gd -25 v gate-source voltage v gs -25 v gate-gate voltage v gg 50 v forward gate current i g 50 ma power dissipation (per side) p d 367 mw (total) 500 mw power derating (per side) 3 mw/ o c (total) 4 mw/ o c operating junction temperature t j -55 to 150 o c storage temperature t stg -65 to 200 o c lead temperature (1/16" from case for 10 seconds) t l 300 o c electrical characteristics (t a = 25 o c unless otherwise noted) symbol characteristcs typ 1 u443 u444 unit test conditions min max min max static v (br)gss gate-source breakdown voltage -35 -25 -25 v i g = -1 m a, v ds = 0v v gs(off ) gate-source cut off voltage -3.5 -1 -6 -1 -6 v ds = 10v, i d = 1na i dss saturation drain current 2 15630630 mav ds = 10v, v gs = 0v i gss gate reverse current -1 -500 -500 pa v gs = -15v, v ds = 0v -2 na t a = 150 o c i g gate operating current -1 -500 -500 pa v dg = 10v, i d = 5ma -0.3 na t a = 125 o c v gs(f) gate-source forward voltage 0.7 v i g = 1ma, v ds = 0v dynamic g fs common-source forward transconductance 6 4.5 9 4.5 9 ms v dg = 10v, i d = 5ma f = 1khz g os common-source output conductance 70 200 200 m s c iss common-source input capacitance 3 pf v dg = 10v, i d = 5ma f = 1mhz c rss common-source reverse transfer capacitance 1 e n equivalent input noise voltage 4 nv/ hz v dg = 10v, i d = 5ma f = 10khz matching | v gs1 -v gs2 | differential gate-source voltage 6 10 20 mv v dg = 10v, i d = 5ma d | v gs1 -v gs2 | d t gate-source voltage differential change with temperature 20 m v/ o c t = -55 to 25 o c v dg =10v, i d = 5ma 20 t = 25 to 125 o c i dss1 i dss2 saturation drain current ratio 0.97 v ds = 10v, v gs = 0v g fs1 g fs2 transconductance ratio 0.97 v dg = 10v, i d = 5ma f= 1 khz cmrr common mode rejection ratio 85 db v dd = 5 to 10v, i d = 5ma notes: 1. for design aid only, not subject to production testing. 2. pulse test; pw = 300 m s, duty cycle 3%.
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